Drain characteristics of an n-channel MOSFET is shown in figure below. VGS can be positive and negative.The characteristics for p-channel are similar to the above figure excepts signs of current and voltage are reversed. The transconductance curve(transfer characteristics)of depletion type MOSFET is shown in figure below. This characteristcs shows the variation of ID with VGS.IDSS denoteS the drain current with shorted gate.The curve extends on both sides ie VGS can be negative as well as positive.Since VGS can be positive also IDSS is not maximum value of drain current. This device has three regions.The ohmic region,active region and breakdown region.The rising position of the drain characteristics is the ohmic region.The device acts as resistor.The drain current is nearly constant read more

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i) Negative Gate Operation In the figure given below a negative bias is applied to the gate The negative voltage depletes the conducting channel of majority carriers electrons and controls their flow. The gate and channel forms a parallel plate capacitor with silicon dioxide layer as dielectric.The negative gate bias causes concentration of electrons on the gate.These electrons repel the conduction band electrons in the n-channel leaving a positive ions layer as shown.More negative gate voltage,the greater is the depletion of electrons in n-channel. ii) Positive Gate Operation A depletion mode MOSFET when gate bias is positive is shown in figure below. The gate and channel can again be thought of as a capacitor positive charge on gate induce negative charge in n-channel.These negative read more

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Power MOSFET is a voltage controlled device and it requires only small input current.It has extremely high input impedance and is widely used in switching devices.The switching is high and the switching time is in the order of nanoseconds.They are used in low power high frequency converters.MOSFETs are of two types. i) Depletion Type MOSFET ii) Enhancement type MOSFET i) Depletion Type MOSFET A depletion type n-channel MOSFET has a lightly doped p-type substrate into which two highly doped n-region(n+) are diffused.These two regions acts as drain and source.A thin insulating silicon dioxide layer is grown across the semiconductor surface. The two holes cut into the oxide layer allow contact with the source and drain.A metal layer is then deposited on the oxide.This layer forms the read more

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